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| SOT89 PNP SILICON PLANAR DARLINGTON TRANSISTOR ISSUE 3 - SEPTEMBER 1995 COMPLEMENTARY TYPE - PARTMARKING DETAIL - BCV49 EE 7 BCV48 C E C B SOT89 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at T amb =25C Operating and Storage Temperature Range SYMBOL VCBO V CEO V EBO I CM IC P tot T j:T stg VALUE -80 -60 -10 -800 -500 1 -65 to +150 UNIT V V V mA mA W C ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current SYMBOL V (BR)CBO V (BR)CEO V (BR)EBO I CBO MIN. -80 -60 -10 -100 -10 -100 -1 -1.5 2000 4000 10000 2000 200 4.5 MHz pF TYP. MAX. UNIT V V V nA A nA V V CONDITIONS. I C=-100A I C=-10mA* I E=-10A V CB=-60V V CB=-60V, T amb=150C V EB=-4V I C=-100mA, I B-0.1mA* I C=-100mA, I B=-0.1mA* I C=-100A, V CE=-1V I C=-10mA, V CE=-5V* I C=-100mA, V CE=-5V* I C=-500mA, V CE=-5V* I C=-50mA, V CE=-5V f = 20MHz V CB=-10V, f=1MHz Emitter Cut-Off Current I EBO Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage V CE(sat) V BE(sat) Static Forward Current h FE Transfer Ratio Transition Frequency Output Capacitance fT C obo *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% Periodic Sample Test Only. 3 - 25 |
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